The technology

Technology Summary

This invention is a new switching strategy for computing memory which only uses a voltage and doesn’t require a bias magnetic field. Existing processes use magnetic field or spin current for reversal which consumes a lot of energy. This invention uses voltage controlled magnetic anisotropy for core reversal of a magnetic skyrmion, skyrmion mediated ferromagnetic state reversal and switching between skyrmion and ferromagnet states without requiring any bias magnetic field or spin current. This strategy for switching of a fixed skyrmion leads to smaller and more stable devices for high density memory applications. This invention can create new avenues towards implementing energy efficient nanomagnetic memory and computing. The figure below displays the spin state configuration with varying voltage, where A shows skyrmion with core pointing down changing until F with core pointing up [1].

Finally, another important invention is the ability to control the switching pathway between the ferromagnetic “up” and “down” states in perpendicular MTJs to lower the write current needed to switch between these states. This paper is under preparation for publication [2].

Technology status

A publication describing a portion of this technology can be found at the following link:

• [1]Scientific Reports, 6, 31272 (2016); http://www.nature.com/articles/srep31272 
• [2] To be published.